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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS8050 NPN medium power 25 V transistor Product specification Supersedes data of 2002 Nov 18 2004 Aug 10 Philips Semiconductors Product specification NPN medium power 25 V transistor FEATURES * High total power dissipation * High current capability. APPLICATIONS * Medium power switching and muting * Amplification * Portable radio output amplifier (class-B, push-pull). DESCRIPTION NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. handbook, halfpage PSS8050 QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 collector base emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 25 1.5 UNIT V A 1 MARKING TYPE NUMBER PSS8050C PSS8050D MARKING CODE 2 3 MSB033 S8050C S8050D Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp 1 s; duty cycle 0.75%. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - - - - - -65 - -65 MIN. MAX. 40 25 6 1.5 2 300 1 850 900 1 +150 150 +150 V V V A A mA A mW mW W C C C UNIT 2004 Aug 10 2 Philips Semiconductors Product specification NPN medium power 25 V transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; note 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. PSS8050 VALUE 147 139 125 UNIT K/W K/W K/W 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp 1 s; duty cycle 0.75%. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain DC current gain PSS8050C PSS8050D VCEsat VBEsat VBEon fT Cc collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 800 mA; IB = 80 mA IC = 800 mA; IB = 80 mA IC = 10 mA; VCE = 1 V IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = ie = 0; f = 1 MHz CONDITIONS VCB = 35 V; IE = 0 VCB = 35 V; IE = 0; Tamb = 150 C VCE = 25 V; IB = 0 VEB = 6 V; IC = 0 IC = 5 mA; VCE = 1 V IC = 800 mA; VCE = 1 V IC = 100 mA; VCE = 1 V 120 160 - - - 100 - - - 165 - - - - 200 300 500 1.2 1 - 10 mV V V MHz pF MIN. - - - - 45 40 TYP. - - - - - - MAX. 100 50 100 100 - - UNIT nA A nA nA 2004 Aug 10 3 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage 400 MLD946 handbook, halfpage 1200 MLD947 hFE 300 (1) VBE (mV) 1000 (1) 800 200 (2) (2) 600 100 (3) (3) 400 0 10-1 1 10 102 103 104 IC (mA) 200 10-1 1 10 102 103 104 IC (mA) PSS8050C VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050C VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage MLD948 handbook, halfpage 1400 MLD950 VBEsat VCEsat (mV) (mV) 1000 (1) (2) 102 (1) (2) (3) 600 (3) 10 10-1 1 10 102 103 104 IC (mA) 200 10-1 1 10 102 103 104 IC (mA) PSS8050C IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050C IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Aug 10 4 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 103 handbook, halfpage RCEsat () 102 MLD949 handbook, halfpage 2.5 IC MLD951 (A) 2 (1) (2) (3) (4) (5) (6) (7) 1.5 10 1 1 (1) (3) (2) (8) (9) (10) 0.5 0 10-1 1 10 102 103 104 IC (mA) 0 0 0.5 1 1.5 VCE (V) PSS8050C (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA. 2 PSS8050C IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Equivalent on-resistance as a function of collector current; typical values. Fig.7 Collector current as a function of collector-emitter voltage; typical values. 2004 Aug 10 5 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 handbook, halfpage 400 MLD952 handbook, halfpage 1200 MLD953 hFE (1) VBE (mV) 1000 (1) 300 800 200 (2) (2) 600 (3) 100 400 (3) 0 10-1 1 10 102 103 104 IC (mA) 200 10-1 1 10 102 103 104 IC (mA) PSS8050D VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050D VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 (1) (2) (3) MLD954 handbook, halfpage 1400 MLD956 VBEsat (mV) 1000 (1) (2) (3) 10 600 1 10-1 1 10 102 103 104 IC (mA) 200 10-1 1 10 102 103 104 IC (mA) PSS8050D IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. PSS8050D IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Aug 10 6 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 103 handbook, halfpage RCEsat () 102 MLD955 handbook, halfpage 2.5 IC MLD957 (A) 2 (1) (2) (3) (4) (5) (6) (7) (8) 1.5 10 1 1 (1) (3) (2) (9) (10) 0.5 0 10-1 1 10 102 103 104 IC (mA) 0 0 0.5 1 1.5 VCE (V) PSS8050D (1) IB = 55 mA. (2) IB = 49.5 mA. (3) IB = 44 mA. (4) IB = 38.5 mA. (5) IB = 33 mA. (6) IB = 27.5 mA. (7) IB = 22 mA. (8) IB = 16.5 mA. (9) IB = 11 mA. (10) IB = 5.5 mA. 2 PSS8050D IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 Aug 10 7 Philips Semiconductors Product specification NPN medium power 25 V transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PSS8050 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 2004 Aug 10 8 Philips Semiconductors Product specification NPN medium power 25 V transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PSS8050 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Aug 10 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Aug 10 Document order number: 9397 750 13682 |
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